Technische Details IRF8113 IR
Description: MOSFET N-CH 30V 17.2A 8SO, Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Power Dissipation (Max): 2.5W (Ta), Rds On (Max) @ Id, Vgs: 5.6mOhm @ 17.2A, 10V, Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tube.
Weitere Produktangebote IRF8113
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| IRF8113 | Infineon |
 N-Channel 30 V 17.2A (Ta) 2.5W (Ta) Surface Mount 8-SO Транзистори |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
IRF8113 | Infineon Technologies |
Description: MOSFET N-CH 30V 17.2A 8SO Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 17.2A, 10V Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 95 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IRF8113 |
|
Hersteller: Infineon
N-Channel 30 V 17.2A (Ta) 2.5W (Ta) Surface Mount 8-SO Транзистори
N-Channel 30 V 17.2A (Ta) 2.5W (Ta) Surface Mount 8-SO Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF8113 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 17.2A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 17.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Description: MOSFET N-CH 30V 17.2A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 17.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 95 Stücke
Im Einkaufswagen
Stück im Wert von UAH