IRF820ALPBF Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 500V 2.5A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: I2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 3.48 EUR |
| 10+ | 2.31 EUR |
| 100+ | 1.75 EUR |
| 500+ | 1.42 EUR |
| 1000+ | 1.3 EUR |
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Technische Details IRF820ALPBF Vishay Siliconix
Description: MOSFET N-CH 500V 2.5A I2PAK, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc), Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V, Power Dissipation (Max): 50W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: I2PAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V.
Weitere Produktangebote IRF820ALPBF nach Preis ab 1.18 EUR bis 3.63 EUR
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IRF820ALPBF | Hersteller : Vishay Semiconductors |
MOSFETs TO263 500V 2.5A N-CH MOSFET |
auf Bestellung 517 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF820ALPBF | Hersteller : Vishay |
Trans MOSFET N-CH 500V 2.5A 3-Pin(3+Tab) TO-262 |
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IRF820ALPBF | Hersteller : Vishay |
Trans MOSFET N-CH 500V 2.5A 3-Pin(3+Tab) TO-262 |
Produkt ist nicht verfügbar |
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| IRF820ALPBF | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 2.5A; Idm: 10A; 50W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 2.5A Pulsed drain current: 10A Power dissipation: 50W Case: I2PAK; TO262 Gate-source voltage: ±30V On-state resistance: 3Ω Mounting: THT Gate charge: 17nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |