auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 98+ | 1.61 EUR |
| 116+ | 1.31 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IRF820ASPBF Vishay
Description: MOSFET N-CH 500V 2.5A D2PAK, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc), Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V, Power Dissipation (Max): 50W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V.
Weitere Produktangebote IRF820ASPBF nach Preis ab 0.68 EUR bis 3.93 EUR
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IRF820ASPBF | Hersteller : Vishay |
 Trans MOSFET N-CH 500V 2.5A 3-Pin(2+Tab) D2PAK |
auf Bestellung 150 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF820ASPBF | Hersteller : Vishay |
Trans MOSFET N-CH 500V 2.5A 3-Pin(2+Tab) D2PAK |
auf Bestellung 150 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF820ASPBF | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 2.5A; Idm: 10A; 50W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 2.5A Pulsed drain current: 10A Power dissipation: 50W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 3Ω Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1000 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF820ASPBF | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 2.5A; Idm: 10A; 50W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 2.5A Pulsed drain current: 10A Power dissipation: 50W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 3Ω Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF820ASPBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 500V 2.5A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V |
auf Bestellung 858 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF820ASPBF | Hersteller : Vishay Semiconductors |
MOSFET N-Chan 500V 2.5 Amp |
auf Bestellung 528 Stücke: Lieferzeit 14-28 Tag (e) |
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IRF820ASPBF | Hersteller : Vishay |
Trans MOSFET N-CH 500V 2.5A 3-Pin(2+Tab) D2PAK |
auf Bestellung 150 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF820ASPBF | Hersteller : IR |
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auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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IRF820ASPBF | Hersteller : Vishay |
Trans MOSFET N-CH 500V 2.5A 3-Pin(2+Tab) D2PAK |
Produkt ist nicht verfügbar |
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IRF820ASPBF | Hersteller : Vishay |
Trans MOSFET N-CH 500V 2.5A 3-Pin(2+Tab) D2PAK |
Produkt ist nicht verfügbar |