
auf Bestellung 881 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
---|---|
129+ | 1.15 EUR |
250+ | 1.07 EUR |
500+ | 0.99 EUR |
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Technische Details IRF820PBF-BE3 Vishay
Description: MOSFET N-CH 500V 2.5A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc), Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V, Power Dissipation (Max): 50W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V.
Weitere Produktangebote IRF820PBF-BE3 nach Preis ab 0.83 EUR bis 1.47 EUR
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IRF820PBF-BE3 | Hersteller : Vishay / Siliconix |
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auf Bestellung 3510 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF820PBF-BE3 | Hersteller : VISHAY |
![]() tariffCode: 85412900 productTraceability: No rohsCompliant: YES Anzahl der Pins: 3Pin(s) euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - directShipCharge: 25 usEccn: EAR99 |
auf Bestellung 881 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF820PBF-BE3 | Hersteller : Vishay |
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Produkt ist nicht verfügbar |
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IRF820PBF-BE3 | Hersteller : Vishay Siliconix |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V |
Produkt ist nicht verfügbar |