IRF8313TRPBF International Rectifier/Infineon
Hersteller: International Rectifier/Infineon
N-канальний ПТ, Udss, В = 30, Id = 9,7, Ptot, Вт = 2, Тип монт. = smd, Ciss, пФ @ Uds, В = 760 @ 15, Qg, нКл = 9 @ 4,5 В, Rds = 15,5 мОм @ 9,7 A, 10 В, Tексп, °C = -55...+175, Ugs(th) = 2,35 @ 25 мкА,... Група товару: Транзистори Корпус: SOICN-8 Од. вим:
Anzahl je Verpackung: 4000 Stücke
verfügbar 943 Stücke:
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Technische Details IRF8313TRPBF International Rectifier/Infineon
Description: MOSFET 2N-CH 30V 9.7A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 9.7A, Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V, Rds On (Max) @ Id, Vgs: 15.5mOhm @ 9.7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.35V @ 25µA, Supplier Device Package: 8-SO, Part Status: Not For New Designs.
Weitere Produktangebote IRF8313TRPBF
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IRF8313TRPBF | Hersteller : Infineon Technologies |
Description: MOSFET 2N-CH 30V 9.7A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.7A Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V Rds On (Max) @ Id, Vgs: 15.5mOhm @ 9.7A, 10V Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: 8-SO Part Status: Not For New Designs |
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IRF8313TRPBF | Hersteller : Infineon Technologies |
Description: MOSFET 2N-CH 30V 9.7A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.7A Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V Rds On (Max) @ Id, Vgs: 15.5mOhm @ 9.7A, 10V Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: 8-SO Part Status: Not For New Designs |
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IRF8313TRPBF | Hersteller : Infineon Technologies |
MOSFETs MOSFT DUAL NCh 30V 9.7A |
Produkt ist nicht verfügbar |