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IRF840APBF-BE3

IRF840APBF-BE3 Vishay / Siliconix

91065.pdf
Hersteller: Vishay / Siliconix
MOSFETs TO220 500V 8A N-CH MOSFET
auf Bestellung 5880 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+4.84 EUR
10+3.01 EUR
100+2.12 EUR
500+1.8 EUR
1000+1.58 EUR
2000+1.44 EUR
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Technische Details IRF840APBF-BE3 Vishay / Siliconix

Description: MOSFET N-CH 500V 8A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1018 pF @ 25 V.

Weitere Produktangebote IRF840APBF-BE3 nach Preis ab 2.51 EUR bis 7.22 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
IRF840APBF-BE3 IRF840APBF-BE3 Vishay Siliconix 91065.pdf Description: MOSFET N-CH 500V 8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1018 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.22 EUR
10+4.74 EUR
100+3.31 EUR
500+2.7 EUR
1000+2.51 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRF840APBF-BE3 IRF840APBF-BE3 VISHAY VISH-S-A0001435520-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: VISHAY - IRF840APBF-BE3 - MOSFET, N-CH, 500V, 8A, TO-220AB
tariffCode: 85364900
productTraceability: No
rohsCompliant: YES
Anzahl der Pins: 3Pin(s)
euEccn: NLR
isCanonical: Y
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
directShipCharge: 25
usEccn: EAR99
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
IRF840APBF-BE3 91065.pdf
IRF840APBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1018 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.22 EUR
10+4.74 EUR
100+3.31 EUR
500+2.7 EUR
1000+2.51 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRF840APBF-BE3 VISH-S-A0001435520-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0
IRF840APBF-BE3
Hersteller: VISHAY
Description: VISHAY - IRF840APBF-BE3 - MOSFET, N-CH, 500V, 8A, TO-220AB
tariffCode: 85364900
productTraceability: No
rohsCompliant: YES
Anzahl der Pins: 3Pin(s)
euEccn: NLR
isCanonical: Y
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
directShipCharge: 25
usEccn: EAR99
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH