auf Bestellung 64 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.96 EUR |
| 10+ | 2.94 EUR |
| 100+ | 2.34 EUR |
| 500+ | 1.97 EUR |
| 800+ | 1.68 EUR |
| 2400+ | 1.6 EUR |
| 4800+ | 1.55 EUR |
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Produktbewertung abgeben
Technische Details IRF840ASTRLPBF Vishay Semiconductors
Description: MOSFET N-CH 500V 8A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V, Power Dissipation (Max): 3.1W (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1018 pF @ 25 V.
Weitere Produktangebote IRF840ASTRLPBF nach Preis ab 2.64 EUR bis 4.21 EUR
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IRF840ASTRLPBF | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 500V 8A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V Power Dissipation (Max): 3.1W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1018 pF @ 25 V |
auf Bestellung 675 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF840ASTRLPBF | Hersteller : Vishay |
Trans MOSFET N-CH 500V 8A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 1600 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF840ASTRLPBF | Hersteller : Vishay |
Trans MOSFET N-CH 500V 8A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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IRF840ASTRLPBF | Hersteller : Vishay |
Trans MOSFET N-CH 500V 8A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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IRF840ASTRLPBF | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
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IRF840ASTRLPBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 500V 8A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V Power Dissipation (Max): 3.1W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1018 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRF840ASTRLPBF | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |