IRF840B Siliconix
auf Bestellung 205 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 20+ | 2.49 EUR |
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Technische Details IRF840B Siliconix
Description: MOSFET N-CH 500V 8A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 800mOhm @ 4A, 10V, Power Dissipation (Max): 134W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V.
Weitere Produktangebote IRF840B
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| IRF840B | Hersteller : Vishay |
 Trans MOSFET N-CH 500V 8.7A 3-Pin(3+Tab) TO-220AB 0.85Ohm IRF840B; LTB:04.11.2024 ; LTS:04.05.2025 ; NEW->IRF840 IRF840B TIRF840b |
auf Bestellung 150 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF840B | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 500V 8A 3-Pin(3+Tab) TO-220 Rail |
Produkt ist nicht verfügbar |
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IRF840B | Hersteller : onsemi |
Description: MOSFET N-CH 500V 8A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 4A, 10V Power Dissipation (Max): 134W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRF840B | Hersteller : onsemi / Fairchild |
MOSFET 500V N-Channel B-FET |
Produkt ist nicht verfügbar |