IRF840BPBF-BE3 Vishay / Siliconix
auf Bestellung 6592 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.45 EUR |
| 10+ | 1.57 EUR |
| 100+ | 1.4 EUR |
| 500+ | 1.22 EUR |
| 1000+ | 0.99 EUR |
| 2500+ | 0.93 EUR |
| 5000+ | 0.89 EUR |
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Technische Details IRF840BPBF-BE3 Vishay / Siliconix
Description: MOSFET N-CH 500V 8.7A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc), Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V, Power Dissipation (Max): 156W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 527 pF @ 100 V.
Weitere Produktangebote IRF840BPBF-BE3 nach Preis ab 2.94 EUR bis 2.94 EUR
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IRF840BPBF-BE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 500V 8.7A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 527 pF @ 100 V |
auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF840BPBF-BE3 | Hersteller : Vishay |
N Channel MOSFET |
Produkt ist nicht verfügbar |
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IRF840BPBF-BE3 | Hersteller : Vishay |
Trans MOSFET N-CH 500V 8.7A 3-Pin(3+Tab) TO-220-1 |
Produkt ist nicht verfügbar |