Technische Details IRF8714PBF
Description: MOSFET N-CH 30V 14A 8SO, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Discontinued at Digi-Key, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 2.35V @ 25µA, Power Dissipation (Max): 2.5W (Ta), Rds On (Max) @ Id, Vgs: 8.7mOhm @ 14A, 10V, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide).
Weitere Produktangebote IRF8714PBF
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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IRF8714PBF | Infineon Technologies |
Description: MOSFET N-CH 30V 14A 8SOOperating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Discontinued at Digi-Key Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 2.35V @ 25µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 8.7mOhm @ 14A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
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|
IRF8714PBF | Infineon Technologies |
MOSFETs 30V 1 N-CH HEXFET 8.7mOhms 8.1nC |
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Im Einkaufswagen Stück im Wert von UAH |
| IRF8714PBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 14A 8SO
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Description: MOSFET N-CH 30V 14A 8SO
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF8714PBF |
![]() |
Hersteller: Infineon Technologies
MOSFETs 30V 1 N-CH HEXFET 8.7mOhms 8.1nC
MOSFETs 30V 1 N-CH HEXFET 8.7mOhms 8.1nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH




