IRF8714TRPBF Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 30V 14A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 14A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4000+ | 0.31 EUR |
| 8000+ | 0.3 EUR |
| 12000+ | 0.26 EUR |
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Technische Details IRF8714TRPBF Infineon Technologies
Description: MOSFET N-CH 30V 14A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), Rds On (Max) @ Id, Vgs: 8.7mOhm @ 14A, 10V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 2.35V @ 25µA, Supplier Device Package: 8-SO, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V.
Weitere Produktangebote IRF8714TRPBF nach Preis ab 0.3 EUR bis 6.19 EUR
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IRF8714TRPBF | Hersteller : Infineon Technologies |
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IRF8714TRPBF | Hersteller : Infineon Technologies |
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auf Bestellung 3610 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF8714TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 30V 14A 8-Pin SOIC N T/R |
auf Bestellung 7454 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF8714TRPBF | Hersteller : Infineon Technologies |
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IRF8714TRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 14A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Rds On (Max) @ Id, Vgs: 8.7mOhm @ 14A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V |
auf Bestellung 18606 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF8714TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 30V 14A 8-Pin SOIC N T/R |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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SO-8 30V 14A 8.7mOhm 8.1nC Qg Single N-Channel HEXFET Power MOSFET |
auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF8714TRPBF Produktcode: 197544
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IRF8714TRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 14A; 2.5W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 14A Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement Technology: HEXFET® Power dissipation: 2.5W Anzahl je Verpackung: 4000 Stücke |
Produkt ist nicht verfügbar |
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IRF8714TRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 14A; 2.5W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 14A Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement Technology: HEXFET® Power dissipation: 2.5W |
Produkt ist nicht verfügbar |