Technische Details IRF9520STRRPBF Vishay
Description: MOSFET P-CH 100V 6.8A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc), Rds On (Max) @ Id, Vgs: 600mOhm @ 4.1A, 10V, Power Dissipation (Max): 3.7W (Ta), 60W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V.
Weitere Produktangebote IRF9520STRRPBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| IRF9520STRRPBF | Hersteller : VISHAY |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -100V; -6.8A; Idm: -27A; 60W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -6.8A Pulsed drain current: -27A Power dissipation: 60W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
 |
IRF9520STRRPBF | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 100V 6.8A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 4.1A, 10V Power Dissipation (Max): 3.7W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V |
Produkt ist nicht verfügbar |
|
 |
IRF9520STRRPBF | Hersteller : Vishay / Siliconix |
MOSFET P-Chan 100V 6.8 Amp |
Produkt ist nicht verfügbar |
|
| IRF9520STRRPBF | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -6.8A; Idm: -27A; 60W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -6.8A Pulsed drain current: -27A Power dissipation: 60W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |