IRF9540NLPBF Infineon Technologies

Description: MOSFET P-CH 100V 23A TO262, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 23A (Tc), Rds On (Max) @ Id, Vgs: 117mOhm @ 14A, 10V, Power Dissipation (Max): 3.1W (Ta), 110W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-262, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25.