Technische Details IRF9540STRRPBF Vishay
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -100V; -19A; Idm: -72A; 150W, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -100V, Drain current: -19A, Pulsed drain current: -72A, Power dissipation: 150W, Case: D2PAK; TO263, Gate-source voltage: ±20V, On-state resistance: 0.2Ω, Mounting: SMD, Kind of channel: enhancement, Gate charge: 61nC, Kind of package: reel; tape, Anzahl je Verpackung: 800 Stücke.
Weitere Produktangebote IRF9540STRRPBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| IRF9540STRRPBF | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -19A; Idm: -72A; 150W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -19A Pulsed drain current: -72A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: SMD Kind of channel: enhancement Gate charge: 61nC Kind of package: reel; tape Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
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IRF9540STRRPBF | Hersteller : Vishay / Siliconix | MOSFETs P-Chan 100V 19 Amp |
Produkt ist nicht verfügbar |
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| IRF9540STRRPBF | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -19A; Idm: -72A; 150W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -19A Pulsed drain current: -72A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: SMD Kind of channel: enhancement Gate charge: 61nC Kind of package: reel; tape |
Produkt ist nicht verfügbar |