
IRF9620SPBF Vishay Siliconix

Description: MOSFET P-CH 200V 3.5A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
auf Bestellung 1989 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
6+ | 3.48 EUR |
10+ | 2.52 EUR |
100+ | 2.00 EUR |
500+ | 1.67 EUR |
1000+ | 1.66 EUR |
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Technische Details IRF9620SPBF Vishay Siliconix
Description: MOSFET P-CH 200V 3.5A D2PAK, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V, Power Dissipation (Max): 3W (Ta), 40W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V.
Weitere Produktangebote IRF9620SPBF nach Preis ab 1.71 EUR bis 3.57 EUR
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IRF9620SPBF | Hersteller : Vishay / Siliconix |
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auf Bestellung 3847 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF9620SPBF | Hersteller : Vishay |
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IRF9620SPBF | Hersteller : Vishay |
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Produkt ist nicht verfügbar |
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IRF9620SPBF | Hersteller : VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -200V; -3.5A; Idm: -14A; 40W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -3.5A Pulsed drain current: -14A Power dissipation: 40W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IRF9620SPBF | Hersteller : VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -200V; -3.5A; Idm: -14A; 40W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -3.5A Pulsed drain current: -14A Power dissipation: 40W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |