IRF9640SPBF
Produktcode: 22419
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Lieblingsprodukt
Hersteller: IR
Gehäuse: SMD-220
Drain-Source-Spannung Uds, V: 200 V
Drain-Strom Id, A: 11 A
Durchlasswiderstand Rds(on), Ohm: 0,5 Ohm
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 1200/44
Produktrezensionen
Produktbewertung abgeben
Weitere Produktangebote IRF9640SPBF nach Preis ab 1.96 EUR bis 9.5 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||
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IRF9640SPBF | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -200V; -6.8A; Idm: -44A; 125W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -6.8A Pulsed drain current: -44A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 44nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF9640SPBF | Vishay |
Trans MOSFET P-CH 200V 11A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF9640SPBF | Vishay Semiconductors |
MOSFETs P-Chan 200V 11 Amp |
auf Bestellung 9652 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF9640SPBF | Vishay |
Trans MOSFET P-CH 200V 11A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 799 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF9640SPBF | Vishay |
Trans MOSFET P-CH 200V 11A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 799 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF9640SPBF | Vishay Siliconix |
Description: MOSFET P-CH 200V 11A D2PAKPackaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V Power Dissipation (Max): 3W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
auf Bestellung 1998 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF9640SPBF | VISHAY |
Description: VISHAY - IRF9640SPBF - Leistungs-MOSFET, p-Kanal, 200 V, 11 A, 0.5 ohm, TO-263 (D2PAK), OberflächenmontagetariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 200V rohsCompliant: Y-EX Dauer-Drainstrom Id: 11A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 4V Verlustleistung: 125W SVHC: Lead (04-Feb-2026) Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: p-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.5ohm |
auf Bestellung 658 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF9640SPBF |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -6.8A; Idm: -44A; 125W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -6.8A
Pulsed drain current: -44A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -6.8A; Idm: -44A; 125W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -6.8A
Pulsed drain current: -44A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 23+ | 3.71 EUR |
| 31+ | 2.76 EUR |
| 33+ | 2.65 EUR |
| 34+ | 2.53 EUR |
| 50+ | 2.43 EUR |
| 100+ | 2.34 EUR |
| 250+ | 2.23 EUR |
| 500+ | 2.17 EUR |
| IRF9640SPBF |
![]() |
Hersteller: Vishay
Trans MOSFET P-CH 200V 11A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET P-CH 200V 11A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 43+ | 4.19 EUR |
| 50+ | 3.99 EUR |
| 100+ | 3.75 EUR |
| 250+ | 3.49 EUR |
| 500+ | 3.32 EUR |
| IRF9640SPBF |
![]() |
Hersteller: Vishay Semiconductors
MOSFETs P-Chan 200V 11 Amp
MOSFETs P-Chan 200V 11 Amp
auf Bestellung 9652 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.62 EUR |
| 10+ | 4.13 EUR |
| 100+ | 3.12 EUR |
| 2000+ | 2.92 EUR |
| 5000+ | 1.98 EUR |
| 10000+ | 1.96 EUR |
| IRF9640SPBF |
![]() |
Hersteller: Vishay
Trans MOSFET P-CH 200V 11A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET P-CH 200V 11A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 799 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 24+ | 7.33 EUR |
| 46+ | 3.83 EUR |
| 50+ | 3.71 EUR |
| 100+ | 3.36 EUR |
| 500+ | 2.71 EUR |
| IRF9640SPBF |
![]() |
Hersteller: Vishay
Trans MOSFET P-CH 200V 11A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET P-CH 200V 11A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 799 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 24+ | 7.33 EUR |
| 46+ | 3.75 EUR |
| 50+ | 3.58 EUR |
| 100+ | 3.18 EUR |
| 500+ | 2.5 EUR |
| IRF9640SPBF |
![]() |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 11A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Description: MOSFET P-CH 200V 11A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 1998 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.69 EUR |
| 50+ | 4.45 EUR |
| 100+ | 4.05 EUR |
| 500+ | 3.33 EUR |
| 1000+ | 3.11 EUR |
| IRF9640SPBF |
![]() |
Hersteller: VISHAY
Description: VISHAY - IRF9640SPBF - Leistungs-MOSFET, p-Kanal, 200 V, 11 A, 0.5 ohm, TO-263 (D2PAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 200V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 11A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 4V
Verlustleistung: 125W
SVHC: Lead (04-Feb-2026)
Bauform - Transistor: TO-263 (D2PAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: p-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.5ohm
Description: VISHAY - IRF9640SPBF - Leistungs-MOSFET, p-Kanal, 200 V, 11 A, 0.5 ohm, TO-263 (D2PAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 200V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 11A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 4V
Verlustleistung: 125W
SVHC: Lead (04-Feb-2026)
Bauform - Transistor: TO-263 (D2PAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: p-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.5ohm
auf Bestellung 658 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 27+ | 9.5 EUR |
| 52+ | 4.52 EUR |
| 100+ | 3.26 EUR |
| 500+ | 2.49 EUR |






