auf Bestellung 403 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.31 EUR |
| 10+ | 2.06 EUR |
| 100+ | 1.57 EUR |
| 250+ | 1.56 EUR |
| 500+ | 1.30 EUR |
| 1000+ | 1.03 EUR |
| 2500+ | 0.96 EUR |
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Technische Details IRF9910TRPBF Infineon Technologies
Description: MOSFET 2N-CH 20V 10A/12A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 10A, 12A, Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V, Rds On (Max) @ Id, Vgs: 9.3mOhm @ 12A, 10V, Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.55V @ 250µA, Supplier Device Package: 8-SO, Part Status: Obsolete.
Weitere Produktangebote IRF9910TRPBF nach Preis ab 1.76 EUR bis 2.67 EUR
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IRF9910TRPBF | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 20V 10A/12A 8-Pin SOIC N T/R |
auf Bestellung 2752 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF9910TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 20V 10A/12A 8-Pin SOIC N T/R |
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| IRF9910TRPBF | Hersteller : INFINEON TECHNOLOGIES |
IRF9910TRPBF Multi channel transistors |
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IRF9910TRPBF | Hersteller : Infineon Technologies |
Description: MOSFET 2N-CH 20V 10A/12A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10A, 12A Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V Rds On (Max) @ Id, Vgs: 9.3mOhm @ 12A, 10V Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.55V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete |
Produkt ist nicht verfügbar |
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IRF9910TRPBF | Hersteller : Infineon Technologies |
Description: MOSFET 2N-CH 20V 10A/12A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10A, 12A Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V Rds On (Max) @ Id, Vgs: 9.3mOhm @ 12A, 10V Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.55V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete |
Produkt ist nicht verfügbar |