| Anzahl | Preis |
|---|---|
| 2+ | 2.31 EUR |
| 10+ | 2.06 EUR |
| 100+ | 1.57 EUR |
| 250+ | 1.56 EUR |
| 500+ | 1.3 EUR |
| 1000+ | 1.03 EUR |
| 2500+ | 0.96 EUR |
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Technische Details IRF9910TRPBF Infineon Technologies
Description: MOSFET 2N-CH 20V 10A/12A 8SO, Part Status: Obsolete, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 2.55V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V, Rds On (Max) @ Id, Vgs: 9.3mOhm @ 12A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 10A, 12A, Drain to Source Voltage (Vdss): 20V, Power - Max: 2W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote IRF9910TRPBF
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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IRF9910TRPBF | Infineon Technologies |
  Description: MOSFET 2N-CH 20V 10A/12A 8SOPart Status: Obsolete Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 2.55V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Rds On (Max) @ Id, Vgs: 9.3mOhm @ 12A, 10V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V Current - Continuous Drain (Id) @ 25°C: 10A, 12A Drain to Source Voltage (Vdss): 20V Power - Max: 2W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
|
IRF9910TRPBF | Infineon Technologies |
Description: MOSFET 2N-CH 20V 10A/12A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10A, 12A Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V Rds On (Max) @ Id, Vgs: 9.3mOhm @ 12A, 10V Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.55V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRF9910TRPBF |
|
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 20V 10A/12A 8SO
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.55V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 12A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 10A, 12A
Drain to Source Voltage (Vdss): 20V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 20V 10A/12A 8SO
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.55V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 12A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 10A, 12A
Drain to Source Voltage (Vdss): 20V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF9910TRPBF |
|
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 20V 10A/12A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 10A, 12A
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Description: MOSFET 2N-CH 20V 10A/12A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 10A, 12A
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH