Technische Details IRF9952PBF
- MOSFET, DUAL, NP, LOGIC, SO-8
- Transistor Type:MOSFET
- Transistor Polarity:NP
- Typ Voltage Vds:30V
- Cont Current Id:3.5A
- On State Resistance:0.1ohm
- Voltage Vgs Rds on Measurement:10V
- Typ Voltage Vgs th:1V
- Case Style:SOIC
- Termination Type:SMD
- Cont Current Id N Channel 2:3.5A
- Cont Current Id P Channel:2.3A
- Current Temperature:25`C
- External Depth:5.2mm
- External Length / Height:1.75mm
- External Width:4.05mm
- Full Power Rating Temperature:25`C
- Max Junction Temperature Tj:150`C
- Max On State Resistance N Channel:0.1ohm
- Max On State Resistance P Channel:0.25ohm
- Max Voltage Vds:30V
- Max Voltage Vds P Channel:30V
- Min Junction Temperature, Tj:-55`C
- No. of Pins:8
- No. of Transistors:2
- Pin Configuration:b
- Pin Format:1 S1
- 2 G1
- 3 S2
- 4 G2
- 5 D2
- 6 D2
- 7 D1
- 8 D1
- Power Dissipation:2W
- Power Dissipation P Channel 2:2W
- Power Dissipation Pd:2W
- Pulse Current Idm:16A
- Pulse Current Idm N Channel 2:16A
- Pulse Current Idm P Channel:10A
- Row Pitch:6.3mm
- SMD Marking:F9952
Weitere Produktangebote IRF9952PBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
IRF9952PBF | Hersteller : Infineon Technologies |
 Description: MOSFET N/P-CH 30V 3.5A/2.3A 8SOPackaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.5A, 2.3A Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V Rds On (Max) @ Id, Vgs: 100mOhm @ 2.2A, 10V Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO Part Status: Discontinued at Digi-Key |
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