Technische Details IRF9956
- MOSFET, DUAL NN LOGIC SO-8
- Transistor Polarity:Dual N
- Max Voltage Vds:30V
- On State Resistance:0.1ohm
- Power Dissipation:2W
- Transistor Case Style:SO
- No. of Pins:8
- Case Style:SO-8 (SOIC-8)
- Cont Current Id:3.5A
- Current Temperature:25`C
- External Depth:5.2mm
- External Length / Height:1.75mm
- External Width:4.05mm
- Full Power Rating Temperature:25`C
- No. of Transistors:2
- Pin Configuration:c
- Pin Format:1 S1
- 2 G1
- 3 S2
- 4 G2
- 5 D2
- 6 D2
- 7 D1
- 8 D1
- Power Dissipation Pd:2W
- Pulse Current Idm:16A
- Row Pitch:6.3mm
- SMD Marking:F9956
- Termination Type:SMD
- Transistor Type:MOSFET
Weitere Produktangebote IRF9956
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| IRF9956 | Hersteller : IR |
 SO-8 |
auf Bestellung 54000 Stücke: Lieferzeit 21-28 Tag (e) |
||
| IRF9956 | Hersteller : Infineon Technologies |
Description: MOSFET 2N-CH 30V 3.5A 8SO Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.5A Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V Rds On (Max) @ Id, Vgs: 100mOhm @ 2.2A, 10V Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete |
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