IRF9Z14STRLPBF Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET P-CH 60V 6.7A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
auf Bestellung 665 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.55 EUR |
| 10+ | 1.95 EUR |
| 100+ | 1.51 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IRF9Z14STRLPBF Vishay Siliconix
Description: MOSFET P-CH 60V 6.7A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc), Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V, Power Dissipation (Max): 3.7W (Ta), 43W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V.
Weitere Produktangebote IRF9Z14STRLPBF nach Preis ab 1.36 EUR bis 3.56 EUR
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IRF9Z14STRLPBF | Hersteller : Vishay Semiconductors |
MOSFETs TO263 P CHAN 60V |
auf Bestellung 7134 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF9Z14STRLPBF | Hersteller : Vishay |
Trans MOSFET P-CH Si 60V 6.7A 3-Pin(2+Tab) D2PAK T/R |
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IRF9Z14STRLPBF | Hersteller : Vishay |
Trans MOSFET P-CH Si 60V 6.7A 3-Pin(2+Tab) D2PAK T/R |
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| IRF9Z14STRLPBF | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -6.7A; Idm: -27A; 43W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -6.7A Pulsed drain current: -27A Power dissipation: 43W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
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IRF9Z14STRLPBF | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 60V 6.7A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V Power Dissipation (Max): 3.7W (Ta), 43W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V |
Produkt ist nicht verfügbar |
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| IRF9Z14STRLPBF | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -6.7A; Idm: -27A; 43W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -6.7A Pulsed drain current: -27A Power dissipation: 43W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |