auf Bestellung 750 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10+ | 5.51 EUR |
| 12+ | 4.6 EUR |
| 100+ | 3.64 EUR |
| 250+ | 3.38 EUR |
| 500+ | 3.07 EUR |
| 800+ | 3.04 EUR |
| 2400+ | 2.89 EUR |
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Produktbewertung abgeben
Technische Details IRF9Z34STRRPBF Vishay / Siliconix
Description: MOSFET P-CH 60V 18A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 140mOhm @ 11A, 10V, Power Dissipation (Max): 3.7W (Ta), 88W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V.
Weitere Produktangebote IRF9Z34STRRPBF nach Preis ab 4.4 EUR bis 6.47 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IRF9Z34STRRPBF | Hersteller : Vishay Siliconix |
 Description: MOSFET P-CH 60V 18A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 11A, 10V Power Dissipation (Max): 3.7W (Ta), 88W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V |
auf Bestellung 373 Stücke: Lieferzeit 21-28 Tag (e) |
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IRF9Z34STRRPBF | Hersteller : Vishay |
Trans MOSFET P-CH Si 60V 18A 3-Pin(2+Tab) D2PAK T/R |
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IRF9Z34STRRPBF | Hersteller : Vishay |
Trans MOSFET P-CH Si 60V 18A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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| IRF9Z34STRRPBF | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -18A; Idm: -72A; 88W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -18A Pulsed drain current: -72A Power dissipation: 88W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.14Ω Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
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IRF9Z34STRRPBF | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 60V 18A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 11A, 10V Power Dissipation (Max): 3.7W (Ta), 88W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V |
Produkt ist nicht verfügbar |
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| IRF9Z34STRRPBF | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -18A; Idm: -72A; 88W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -18A Pulsed drain current: -72A Power dissipation: 88W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.14Ω Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |