IRFAF52 International Rectifier
Hersteller: International Rectifier
Description: N-CHANNEL HERMETIC MOS HEXFET
Power Dissipation (Max): 150W
Current - Continuous Drain (Id) @ 25°C: 5.7A
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Packaging: Bulk
Drain to Source Voltage (Vdss): 900 V
Part Status: Active
Supplier Device Package: TO-204AA (TO-3)
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Technische Details IRFAF52 International Rectifier
Description: N-CHANNEL HERMETIC MOS HEXFET, Power Dissipation (Max): 150W, Current - Continuous Drain (Id) @ 25°C: 5.7A, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Mounting Type: Through Hole, Package / Case: TO-204AA, TO-3, Packaging: Bulk, Drain to Source Voltage (Vdss): 900 V, Part Status: Active, Supplier Device Package: TO-204AA (TO-3).
Weitere Produktangebote IRFAF52
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| IRFAF52 | Hersteller : IR\MOT |
01+ TO-3 |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |