auf Bestellung 1279 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.77 EUR |
| 10+ | 3.78 EUR |
| 100+ | 2.66 EUR |
| 500+ | 2.2 EUR |
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Technische Details IRFB4127PBFXKMA1 Infineon Technologies
Description: MOSFET N-CH 200V 76A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 76A (Tc), Rds On (Max) @ Id, Vgs: 20mOhm @ 44A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 50 V.
Weitere Produktangebote IRFB4127PBFXKMA1 nach Preis ab 2.65 EUR bis 5.77 EUR
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IRFB4127PBFXKMA1 | Hersteller : Infineon Technologies |
 Description: MOSFET N-CH 200V 76A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 76A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 44A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 50 V |
auf Bestellung 173 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRFB4127PBFXKMA1 | Hersteller : Infineon Technologies |
IRFB4127PBFXKMA1 |
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