IRFB7540PBF INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 160W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 160W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: THT
Gate charge: 88nC
Kind of channel: enhancement
Kind of package: tube
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Technische Details IRFB7540PBF INFINEON TECHNOLOGIES
Description: MOSFET N-CH 60V 110A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), Rds On (Max) @ Id, Vgs: 5.1mOhm @ 65A, 10V, Power Dissipation (Max): 160W (Tc), Vgs(th) (Max) @ Id: 3.7V @ 100µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4555 pF @ 25 V.
Weitere Produktangebote IRFB7540PBF nach Preis ab 0.93 EUR bis 3.08 EUR
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IRFB7540PBF | Infineon Technologies |
MOSFETs MOSFET N CH 60V 110A TO-220AB |
auf Bestellung 6786 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFB7540PBF | Infineon Technologies |
Description: MOSFET N-CH 60V 110A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 5.1mOhm @ 65A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 100µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4555 pF @ 25 V |
auf Bestellung 885 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IRFB7540PBF |
|
Hersteller: Infineon Technologies
MOSFETs MOSFET N CH 60V 110A TO-220AB
MOSFETs MOSFET N CH 60V 110A TO-220AB
auf Bestellung 6786 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.08 EUR |
| 10+ | 1.48 EUR |
| 100+ | 1.2 EUR |
| 500+ | 1.02 EUR |
| 1000+ | 0.93 EUR |
| IRFB7540PBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 110A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 65A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4555 pF @ 25 V
Description: MOSFET N-CH 60V 110A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 65A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4555 pF @ 25 V
auf Bestellung 885 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 3.08 EUR |
| 50+ | 1.48 EUR |
| 100+ | 1.33 EUR |
| 500+ | 1.05 EUR |