IRFB9N65APBF-BE3 Vishay / Siliconix
| Anzahl | Preis |
|---|---|
| 1+ | 5.26 EUR |
| 10+ | 3.85 EUR |
| 25+ | 3.26 EUR |
| 100+ | 2.96 EUR |
| 500+ | 2.43 EUR |
| 1000+ | 2.24 EUR |
| 5000+ | 2.22 EUR |
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Technische Details IRFB9N65APBF-BE3 Vishay / Siliconix
Description: MOSFET N-CH 650V 8.5A TO220AB, Input Capacitance (Ciss) (Max) @ Vds: 1417 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Part Status: Active, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 167W (Tc), Rds On (Max) @ Id, Vgs: 930mOhm @ 5.1A, 10V, Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote IRFB9N65APBF-BE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IRFB9N65APBF-BE3 | Vishay Siliconix |
 Description: MOSFET N-CH 650V 8.5A TO220ABInput Capacitance (Ciss) (Max) @ Vds: 1417 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 167W (Tc) Rds On (Max) @ Id, Vgs: 930mOhm @ 5.1A, 10V Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRFB9N65APBF-BE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 8.5A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1417 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 930mOhm @ 5.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 650V 8.5A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1417 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 930mOhm @ 5.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH