IRFB9N65APBF-BE3 Vishay / Siliconix
auf Bestellung 1851 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.26 EUR |
| 10+ | 3.85 EUR |
| 25+ | 3.26 EUR |
| 100+ | 2.96 EUR |
| 500+ | 2.43 EUR |
| 1000+ | 2.24 EUR |
| 5000+ | 2.22 EUR |
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Technische Details IRFB9N65APBF-BE3 Vishay / Siliconix
Description: MOSFET N-CH 650V 8.5A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc), Rds On (Max) @ Id, Vgs: 930mOhm @ 5.1A, 10V, Power Dissipation (Max): 167W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1417 pF @ 25 V.
Weitere Produktangebote IRFB9N65APBF-BE3 nach Preis ab 2.34 EUR bis 6.21 EUR
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IRFB9N65APBF-BE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 650V 8.5A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc) Rds On (Max) @ Id, Vgs: 930mOhm @ 5.1A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1417 pF @ 25 V |
auf Bestellung 821 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFB9N65APBF-BE3 | Hersteller : Vishay |
Trans MOSFET N-CH 650V 8.5A 3-Pin(3+Tab) TO-220AB |
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