Technische Details IRFBA1404PPBF
- MOSFET, N, 40V, 206A, SUPER 220
- Transistor Type:MOSFET
- Max Voltage Vds:40V
- On State Resistance:0.0037ohm
- Power Dissipation:300W
- Transistor Case Style:Super-220
- Case Style:Super-220
- Cont Current Id:206A
- Junction to Case Thermal Resistance A:0.5`C/W
- Max Voltage Vgs th:4V
- On State resistance @ Vgs = 10V:3.7ohm
- Power Dissipation Pd:300W
- Pulse Current Idm:650A
- Termination Type:Through Hole
- Transistor Polarity:N
- Typ Voltage Vds:40V
- Typ Voltage Vgs th:4V
- Voltage Vgs Rds on Measurement:10V
Weitere Produktangebote IRFBA1404PPBF nach Preis ab 4.14 EUR bis 6.55 EUR
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IRFBA1404PPBF | Hersteller : Infineon / IR |
 MOSFET MOSFT 40V 206A 3.7mOhm 160nC |
auf Bestellung 252 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRFBA1404PPBF | Hersteller : Infineon |
MOSFET N-CH 40V 206A SUPER-220 Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |
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IRFBA1404PPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 40V 206A SUPER-220 Packaging: Tube Package / Case: TO-273AA Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 206A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 95A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SUPER-220™ (TO-273AA) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V |
Produkt ist nicht verfügbar |