Weitere Produktangebote IRFBA90N20DPBF
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IRFBA90N20DPBF | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 200V 98A 3-Pin(3+Tab) TO-273AA Tube |
Produkt ist nicht verfügbar |
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IRFBA90N20DPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 200V 98A SUPER-220 Packaging: Tube Package / Case: TO-273AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 98A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 59A, 10V Power Dissipation (Max): 650W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: SUPER-220™ (TO-273AA) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6080 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRFBA90N20DPBF | Hersteller : Infineon / IR |
MOSFET MOSFT 200V 98A 23mOhm 160nC |
Produkt ist nicht verfügbar |
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IRFBA90N20DPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 98A; 650W; SUPER220 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 98A Power dissipation: 650W Case: SUPER220 Mounting: THT Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |