IRFD121 Harris Corporation

Description: SMALL SIGNAL N-CHANNEL MOSFET, Packaging: Bulk, Package / Case: 4-DIP (0.300", 7.62mm), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc), Rds On (Max) @ Id, Vgs: 300mOhm @ 600mA, 10V, Power Dissipation (Max): 1W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 4-DIP, Hexdip, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V.