IRFD420PBF VISHAY
Hersteller: VISHAYCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.23A; 1W; DIP4
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 24nC
On-state resistance: 3Ω
Drain current: 0.23A
Power dissipation: 1W
Gate-source voltage: ±20V
Drain-source voltage: 500V
Kind of channel: enhancement
Case: DIP4
auf Bestellung 131 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 76+ | 0.94 EUR |
| 85+ | 0.85 EUR |
| 107+ | 0.67 EUR |
| 112+ | 0.64 EUR |
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Technische Details IRFD420PBF VISHAY
Description: MOSFET N-CH 500V 370MA 4DIP, Packaging: Bulk, Package / Case: 4-DIP (0.300", 7.62mm), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 370mA (Ta), Rds On (Max) @ Id, Vgs: 3Ohm @ 220mA, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 4-HVMDIP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V.
Weitere Produktangebote IRFD420PBF nach Preis ab 0.63 EUR bis 2.99 EUR
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IRFD420PBF | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 0.23A; 1W; DIP4 Mounting: THT Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 24nC On-state resistance: 3Ω Drain current: 0.23A Power dissipation: 1W Gate-source voltage: ±20V Drain-source voltage: 500V Kind of channel: enhancement Case: DIP4 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 131 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFD420PBF | Hersteller : Vishay Semiconductors |
MOSFETs MOSFET N-CHANNEL 500V |
auf Bestellung 277 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFD420PBF | Hersteller : Vishay |
Trans MOSFET N-CH 500V 0.37A 4-Pin HVMDIP |
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IRFD420PBF | Hersteller : Vishay |
Trans MOSFET N-CH 500V 0.37A 4-Pin HVMDIP |
Produkt ist nicht verfügbar |
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IRFD420PBF | Hersteller : VISHAY |
Description: VISHAY - IRFD420PBF - Leistungs-MOSFET, n-Kanal, 500 V, 370 mA, 3 ohm, HVMDIP, Durchsteckmontage Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 500 Dauer-Drainstrom Id: 370 Rds(on)-Messspannung Vgs: 10 MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 1 Bauform - Transistor: HVMDIP Anzahl der Pins: 4 Produktpalette: - Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 3 Betriebstemperatur, max.: 150 Schwellenspannung Vgs: 4 SVHC: No SVHC (19-Jan-2021) |
Produkt ist nicht verfügbar |
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IRFD420PBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 500V 370MA 4DIP Packaging: Bulk Package / Case: 4-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 370mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 220mA, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 4-HVMDIP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V |
Produkt ist nicht verfügbar |