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Technische Details IRFD9010PBF Vishay / Siliconix
Description: MOSFET P-CH 50V 1.1A 4DIP, Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Drain to Source Voltage (Vdss): 50 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: 4-HVMDIP, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 1W (Tc), Rds On (Max) @ Id, Vgs: 500mOhm @ 580mA, 10V, Current - Continuous Drain (Id) @ 25°C: 1.1A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: 4-DIP (0.300", 7.62mm), Packaging: Tube.
Weitere Produktangebote IRFD9010PBF nach Preis ab 3.24 EUR bis 3.24 EUR
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IRFD9010PBF | Vishay Siliconix |
 Description: MOSFET P-CH 50V 1.1A 4DIPInput Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Drain to Source Voltage (Vdss): 50 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: 4-HVMDIP Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 580mA, 10V Current - Continuous Drain (Id) @ 25°C: 1.1A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-DIP (0.300", 7.62mm) Packaging: Tube |
auf Bestellung 8 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFD9010PBF | Vishay |
Trans MOSFET P-CH 50V 1.1A 4-Pin HVMDIP |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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IRFD9010PBF | Vishay |
Trans MOSFET P-CH 50V 1.1A 4-Pin HVMDIP |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IRFD9010PBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 50V 1.1A 4DIP
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 4-HVMDIP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 580mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Description: MOSFET P-CH 50V 1.1A 4DIP
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 4-HVMDIP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 580mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 3.24 EUR |
| IRFD9010PBF |
|
Hersteller: Vishay
Trans MOSFET P-CH 50V 1.1A 4-Pin HVMDIP
Trans MOSFET P-CH 50V 1.1A 4-Pin HVMDIP
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
| IRFD9010PBF |
|
Hersteller: Vishay
Trans MOSFET P-CH 50V 1.1A 4-Pin HVMDIP
Trans MOSFET P-CH 50V 1.1A 4-Pin HVMDIP
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)