Technische Details IRFD9110PBF Vishay
Description: 0.7A 100V 1.200 OHM P-CHANNEL, Packaging: Bulk, Package / Case: 4-DIP (0.300", 7.62mm), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 700mA (Ta), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 420mA, 10V, Power Dissipation (Max): 1.3W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 4-DIP, Hexdip, HVMDIP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V.
Weitere Produktangebote IRFD9110PBF nach Preis ab 0.65 EUR bis 3.17 EUR
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IRFD9110 | Siliconix |
 P-MOSFET 0.7A 100V 1.3W 1.2Ω IRFD9110 TIRFD9110Anzahl je Verpackung: 50 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFD9110PBF | Vishay Semiconductors |
MOSFETs HVMDIP 100V .7A P-CH MOSFET |
auf Bestellung 1916 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFD9110PBF | Vishay |
Trans MOSFET P-CH 100V 0.7A 4-Pin HVMDIP |
auf Bestellung 180 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRFD9110 | HARRIS |
IRFD9110 |
auf Bestellung 4262 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRFD9110 | HARRIS |
IRFD9110 |
auf Bestellung 2652 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRFD9110 | Harris Corporation |
Description: 0.7A 100V 1.200 OHM P-CHANNEL Packaging: Bulk Package / Case: 4-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 700mA (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 420mA, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 4-DIP, Hexdip, HVMDIP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V |
auf Bestellung 6914 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRFD9110 |
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auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 50+ | 0.88 EUR |
| IRFD9110PBF |
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Hersteller: Vishay Semiconductors
MOSFETs HVMDIP 100V .7A P-CH MOSFET
MOSFETs HVMDIP 100V .7A P-CH MOSFET
auf Bestellung 1916 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.8 EUR |
| 10+ | 1.88 EUR |
| 100+ | 1.6 EUR |
| 500+ | 1.41 EUR |
| 2500+ | 1.2 EUR |
| 25000+ | 1.13 EUR |
| IRFD9110PBF |
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Hersteller: Vishay
Trans MOSFET P-CH 100V 0.7A 4-Pin HVMDIP
Trans MOSFET P-CH 100V 0.7A 4-Pin HVMDIP
auf Bestellung 180 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 53+ | 3.17 EUR |
| IRFD9110 |
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Hersteller: HARRIS
IRFD9110
IRFD9110
auf Bestellung 4262 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 765+ | 0.72 EUR |
| 1000+ | 0.65 EUR |
| IRFD9110 |
|
Hersteller: HARRIS
IRFD9110
IRFD9110
auf Bestellung 2652 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 765+ | 0.72 EUR |
| 1000+ | 0.65 EUR |
| IRFD9110 |
|
Hersteller: Harris Corporation
Description: 0.7A 100V 1.200 OHM P-CHANNEL
Packaging: Bulk
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 420mA, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 4-DIP, Hexdip, HVMDIP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Description: 0.7A 100V 1.200 OHM P-CHANNEL
Packaging: Bulk
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 420mA, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 4-DIP, Hexdip, HVMDIP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
auf Bestellung 6914 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 550+ | 0.82 EUR |