IRFD9113 Harris Corporation

Description: -0.6A, -80V, 1.6 OHM, P-CHANNEL, Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 15 V, Drain to Source Voltage (Vdss): 60 V, Supplier Device Package: 4-DIP, Hexdip, HVMDIP, Rds On (Max) @ Id, Vgs: 1.6Ohm @ 300mA, 10V, Current - Continuous Drain (Id) @ 25°C: 600mA (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Mounting Type: Through Hole, Package / Case: 4-DIP (0.300", 7.62mm), Packaging: Bulk.