IRFD9220 Vishay
Hersteller: VishayTrans MOSFET P-CH 200V 0.56A 4-Pin HVMDIP IRFD9220 IRFD9220 TIRFD9220
Anzahl je Verpackung: 10 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 30+ | 1.21 EUR |
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Technische Details IRFD9220 Vishay
Description: MOSFET P-CH 200V 560MA 4DIP, Packaging: Tube, Package / Case: 4-DIP (0.300", 7.62mm), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 560mA (Ta), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 340mA, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 4-HVMDIP, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V.
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IRFD9220 Транзисторы HEXFET |
auf Bestellung 99 Stücke: Lieferzeit 7-21 Tag (e) |
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IRFD9220 | Hersteller : Vishay |
Trans MOSFET P-CH 200V 0.56A 4-Pin HVMDIP |
Produkt ist nicht verfügbar |
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IRFD9220 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 200V 560MA 4DIP Packaging: Tube Package / Case: 4-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 560mA (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 340mA, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 4-HVMDIP Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRFD9220 | Hersteller : Vishay / Siliconix |
MOSFETs RECOMMENDED ALT IRFD9220PBF |
Produkt ist nicht verfügbar |