IRFF423 HARRIS

Description: N-CHANNEL POWER MOSFET, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-205AF Metal Can, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Drain to Source Voltage (Vdss): 450 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-205AF (TO-39), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 20W (Tc), Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V, Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc), FET Type: N-Channel.