IRFF9130

Description: 6.5A, 100V, 0.3OHM, P-CHANNEL MO, Package / Case: TO-205AF Metal Can, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-205AF (TO-39), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 25W (Tc), Rds On (Max) @ Id, Vgs: 300mOhm @ 3A, 10V, Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole.