IRFH3702TRPBF Infineon Technologies
| Anzahl | Preis |
|---|---|
| 3+ | 1.21 EUR |
| 10+ | 0.93 EUR |
| 100+ | 0.67 EUR |
| 500+ | 0.51 EUR |
| 1000+ | 0.46 EUR |
| 4000+ | 0.39 EUR |
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Technische Details IRFH3702TRPBF Infineon Technologies
Description: MOSFET N-CH 30V 16A/42A 8PQFN, Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Not For New Designs, Supplier Device Package: 8-PQFN (3x3), Vgs(th) (Max) @ Id: 2.35V @ 25µA, Power Dissipation (Max): 2.8W (Ta), Rds On (Max) @ Id, Vgs: 7.1mOhm @ 16A, 10V, Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 42A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote IRFH3702TRPBF nach Preis ab 0.45 EUR bis 1.58 EUR
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IRFH3702TRPBF | Infineon Technologies |
 Description: MOSFET N-CH 30V 16A/42A 8PQFNInput Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Not For New Designs Supplier Device Package: 8-PQFN (3x3) Vgs(th) (Max) @ Id: 2.35V @ 25µA Power Dissipation (Max): 2.8W (Ta) Rds On (Max) @ Id, Vgs: 7.1mOhm @ 16A, 10V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 42A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
auf Bestellung 1343 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRFH3702TRPBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 16A/42A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: 8-PQFN (3x3)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Power Dissipation (Max): 2.8W (Ta)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 16A/42A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: 8-PQFN (3x3)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Power Dissipation (Max): 2.8W (Ta)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 1343 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 12+ | 1.58 EUR |
| 18+ | 0.99 EUR |
| 100+ | 0.64 EUR |
| 500+ | 0.5 EUR |
| 1000+ | 0.45 EUR |