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IRFH3707TR2PBF

IRFH3707TR2PBF Infineon / IR


irfh3707pbf-1169492.pdf Hersteller: Infineon / IR
MOSFET MOSFT 30V 12A 12.4mOhm 5.4nC
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Technische Details IRFH3707TR2PBF Infineon / IR

Description: MOSFET N-CH 30V 12A/29A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 29A (Tc), Rds On (Max) @ Id, Vgs: 12.4mOhm @ 12A, 10V, Power Dissipation (Max): 2.8W (Ta), Vgs(th) (Max) @ Id: 2.35V @ 25µA, Supplier Device Package: 8-PQFN (3x3), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 15 V.

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IRFH3707TR2PBF IRFH3707TR2PBF Hersteller : Infineon Technologies infineon-irfh3707-datasheet-v01_01-en.pdf Trans MOSFET N-CH 30V 12A 8-Pin PQFN EP T/R
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IRFH3707TR2PBF IRFH3707TR2PBF Hersteller : Infineon Technologies irfh3707pbf.pdf?fileId=5546d462533600a40153561a2e0b1e78 Description: MOSFET N-CH 30V 12A/29A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 29A (Tc)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 12A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-PQFN (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 15 V
Produkt ist nicht verfügbar
IRFH3707TR2PBF IRFH3707TR2PBF Hersteller : Infineon Technologies irfh3707pbf.pdf?fileId=5546d462533600a40153561a2e0b1e78 Description: MOSFET N-CH 30V 12A/29A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 29A (Tc)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 12A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-PQFN (3x3)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 15 V
Produkt ist nicht verfügbar