IRFH4210DTRPBF Infineon Technologies
| Anzahl | Privatkunde |
|---|---|
| 213+ | 3.11 EUR |
| 500+ | 2.75 EUR |
| 1000+ | 2.48 EUR |
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Technische Details IRFH4210DTRPBF Infineon Technologies
Description: HEXFET POWER MOSFET, Packaging: Bulk, Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 44A (Ta), Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 10V, Power Dissipation (Max): 3.5W (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 100µA, Supplier Device Package: PQFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4812 pF @ 13 V.
Weitere Produktangebote IRFH4210DTRPBF nach Preis ab 2.75 EUR bis 3.15 EUR
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IRFH4210DTRPBF | International Rectifier |
 Description: HEXFET POWER MOSFETPackaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Ta) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 10V Power Dissipation (Max): 3.5W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 100µA Supplier Device Package: PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4812 pF @ 13 V |
auf Bestellung 937 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFH4210DTRPBF | Infineon / IR |
MOSFET 25V Single N-Ch HEXFET PWR 50A |
auf Bestellung 3975 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||
| IRFH4210DTRPBF | International Rectifier HiRel Products |
Trans MOSFET N-CH 25V 44A 8-Pin PQFN EP T/R |
auf Bestellung 937 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRFH4210DTRPBF |
|
Hersteller: International Rectifier
Description: HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Ta)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 100µA
Supplier Device Package: PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4812 pF @ 13 V
Description: HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Ta)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 100µA
Supplier Device Package: PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4812 pF @ 13 V
auf Bestellung 937 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 170+ | 3.15 EUR |
| IRFH4210DTRPBF |
|
Hersteller: Infineon / IR
MOSFET 25V Single N-Ch HEXFET PWR 50A
MOSFET 25V Single N-Ch HEXFET PWR 50A
auf Bestellung 3975 Stücke:
Lieferzeit 10-14 Tag (e)
| IRFH4210DTRPBF |
|
Hersteller: International Rectifier HiRel Products
Trans MOSFET N-CH 25V 44A 8-Pin PQFN EP T/R
Trans MOSFET N-CH 25V 44A 8-Pin PQFN EP T/R
auf Bestellung 937 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 213+ | 3.11 EUR |
| 500+ | 2.75 EUR |