IRFH4210DTRPBF Infineon Technologies

Description: HEXFET POWER MOSFET, Packaging: Bulk, Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 44A (Ta), Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 10V, Power Dissipation (Max): 3.5W (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 100µA, Supplier Device Package: PQFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4812 pF @ 13 V.