IRFH4210TRPBF

IRFH4210TRPBF Infineon Technologies


35325289442233668irfh4210pbf.pdf Hersteller: Infineon Technologies
Trans MOSFET N-CH 25V 45A 8-Pin PQFN EP T/R
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Technische Details IRFH4210TRPBF Infineon Technologies

Description: MOSFET N-CH 25V 45A PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45A (Ta), Rds On (Max) @ Id, Vgs: 1.35mOhm @ 50A, 10V, Power Dissipation (Max): 3.6W (Ta), 104W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 100µA, Supplier Device Package: PQFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4812 pF @ 13 V.

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IRFH4210TRPBF IRFH4210TRPBF Hersteller : Infineon Technologies irfh4210pbf.pdf?fileId=5546d462533600a40153561a571f1e82 Description: MOSFET N-CH 25V 45A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 100µA
Supplier Device Package: PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4812 pF @ 13 V
Produkt ist nicht verfügbar
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IRFH4210TRPBF IRFH4210TRPBF Hersteller : Infineon Technologies irfh4210pbf.pdf?fileId=5546d462533600a40153561a571f1e82 Description: MOSFET N-CH 25V 45A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 100µA
Supplier Device Package: PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4812 pF @ 13 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH