IRFH5053TRPBF Infineon Technologies


irfr5410pbf.pdf
Hersteller: Infineon Technologies
Trans MOSFET N-CH 100V 9.3A 8-Pin PQFN T/R
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
4000+1.18 EUR
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IRFH5053TRPBF Infineon Technologies

Description: MOSFET N-CH 100V 9.3A/46A PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 46A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 9.3A, 10V, Power Dissipation (Max): 3.1W (Ta), 8.3W (Tc), Vgs(th) (Max) @ Id: 4.9V @ 100µA, Supplier Device Package: PQFN (5x6) Single Die, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 50 V.

Weitere Produktangebote IRFH5053TRPBF nach Preis ab 1.18 EUR bis 4.51 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
IRFH5053TRPBF IRFH5053TRPBF Infineon Technologies irfr5410pbf.pdf Trans MOSFET N-CH 100V 9.3A 8-Pin PQFN T/R
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
4000+1.18 EUR
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRFH5053TRPBF IRFH5053TRPBF Infineon Technologies irfh5053pbf.pdf?fileId=5546d462533600a40153561ad6851ea2 Description: MOSFET N-CH 100V 9.3A/46A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 9.3A, 10V
Power Dissipation (Max): 3.1W (Ta), 8.3W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: PQFN (5x6) Single Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 50 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+1.37 EUR
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRFH5053TRPBF IRFH5053TRPBF Infineon Technologies Infineon_IRFH5053_DataSheet_v01_01_EN-3363323.pdf MOSFETs 100V 1 N-CH HEXFET 18mOhms 24nC
auf Bestellung 2133 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.66 EUR
10+2.73 EUR
100+1.97 EUR
500+1.57 EUR
1000+1.39 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IRFH5053TRPBF IRFH5053TRPBF Infineon Technologies irfh5053pbf.pdf?fileId=5546d462533600a40153561ad6851ea2 Description: MOSFET N-CH 100V 9.3A/46A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 9.3A, 10V
Power Dissipation (Max): 3.1W (Ta), 8.3W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: PQFN (5x6) Single Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 50 V
auf Bestellung 6455 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.51 EUR
10+2.91 EUR
100+2 EUR
500+1.61 EUR
1000+1.49 EUR
2000+1.38 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRFH5053TRPBF irfr5410pbf.pdf
Hersteller: Infineon Technologies
Trans MOSFET N-CH 100V 9.3A 8-Pin PQFN T/R
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
4000+1.18 EUR
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRFH5053TRPBF irfh5053pbf.pdf?fileId=5546d462533600a40153561ad6851ea2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 9.3A/46A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 9.3A, 10V
Power Dissipation (Max): 3.1W (Ta), 8.3W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: PQFN (5x6) Single Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 50 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4000+1.37 EUR
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRFH5053TRPBF Infineon_IRFH5053_DataSheet_v01_01_EN-3363323.pdf
Hersteller: Infineon Technologies
MOSFETs 100V 1 N-CH HEXFET 18mOhms 24nC
auf Bestellung 2133 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+3.66 EUR
10+2.73 EUR
100+1.97 EUR
500+1.57 EUR
1000+1.39 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IRFH5053TRPBF irfh5053pbf.pdf?fileId=5546d462533600a40153561ad6851ea2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 9.3A/46A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 9.3A, 10V
Power Dissipation (Max): 3.1W (Ta), 8.3W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: PQFN (5x6) Single Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 50 V
auf Bestellung 6455 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4+4.51 EUR
10+2.91 EUR
100+2 EUR
500+1.61 EUR
1000+1.49 EUR
2000+1.38 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH