IRFH5255TRPBF International Rectifier
Hersteller: International RectifierDescription: MOSFET N-CH 25V 15A/51A PQFN
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 51A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Power Dissipation (Max): 3.6W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-PQFN (5x6)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 988 pF @ 13 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 501+ | 0.93 EUR |
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Technische Details IRFH5255TRPBF International Rectifier
Description: MOSFET N-CH 25V 15A/51A PQFN, Packaging: Bulk, Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 51A (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V, Power Dissipation (Max): 3.6W (Ta), 26W (Tc), Vgs(th) (Max) @ Id: 2.35V @ 25µA, Supplier Device Package: 8-PQFN (5x6), Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 988 pF @ 13 V.
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