IRFH5304TRPBF Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 30V 22A/79A 8PQFN
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 47A, 10V
Power Dissipation (Max): 3.6W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 10 V
auf Bestellung 10924 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 814+ | 0.6 EUR |
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Technische Details IRFH5304TRPBF Infineon Technologies
Description: MOSFET N-CH 30V 22A/79A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 79A (Tc), Rds On (Max) @ Id, Vgs: 4.5mOhm @ 47A, 10V, Power Dissipation (Max): 3.6W (Ta), 46W (Tc), Vgs(th) (Max) @ Id: 2.35V @ 50µA, Supplier Device Package: 8-PQFN (5x6), Part Status: Last Time Buy, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 10 V.
Weitere Produktangebote IRFH5304TRPBF nach Preis ab 0.46 EUR bis 1.54 EUR
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IRFH5304TRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 22A/79A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 79A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 47A, 10V Power Dissipation (Max): 3.6W (Ta), 46W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 50µA Supplier Device Package: 8-PQFN (5x6) Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 10 V |
auf Bestellung 8 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFH5304TRPBF | Hersteller : INFINEON |
Description: INFINEON - IRFH5304TRPBF - Leistungs-MOSFET, n-Kanal, 30 V, 79 A, 0.0038 ohm, PQFN, Oberflächenmontage tariffCode: 85412900 productTraceability: No rohsCompliant: YES Verlustleistung: 46 Kanaltyp: n-Kanal euEccn: NLR hazardous: false Drain-Source-Durchgangswiderstand: 0.0038 rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 SVHC: No SVHC (08-Jul-2021) |
auf Bestellung 2690 Stücke: Lieferzeit 14-21 Tag (e) |
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auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFH5304TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 30V 22A 8-Pin PQFN EP T/R |
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IRFH5304TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 30V 22A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
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IRFH5304TRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 22A; 3.6W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 22A Power dissipation: 3.6W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhanced Anzahl je Verpackung: 4000 Stücke |
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IRFH5304TRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 22A/79A 8PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 79A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 47A, 10V Power Dissipation (Max): 3.6W (Ta), 46W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 50µA Supplier Device Package: 8-PQFN (5x6) Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 10 V |
Produkt ist nicht verfügbar |
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IRFH5304TRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 22A; 3.6W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 22A Power dissipation: 3.6W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
Produkt ist nicht verfügbar |