IRFH7004TR2PBF
Produktcode: 63217
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Verschiedene Bauteile > Verschiedene Bauteile 2
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Weitere Produktangebote IRFH7004TR2PBF
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
 |
IRFH7004TR2PBF | Infineon Technologies |
Description: MOSFET N CH 40V 100A PQFN5X6 Input Capacitance (Ciss) (Max) @ Vds: 6419 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 194 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Part Status: Obsolete Supplier Device Package: 8-PQFN (5x6) Vgs(th) (Max) @ Id: 3.9V @ 150µA Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: 8-VQFN Exposed Pad Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRFH7004TR2PBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N CH 40V 100A PQFN5X6
Input Capacitance (Ciss) (Max) @ Vds: 6419 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 194 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Part Status: Obsolete
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 3.9V @ 150µA
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-VQFN Exposed Pad
Packaging: Cut Tape (CT)
Description: MOSFET N CH 40V 100A PQFN5X6
Input Capacitance (Ciss) (Max) @ Vds: 6419 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 194 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Part Status: Obsolete
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 3.9V @ 150µA
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-VQFN Exposed Pad
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH