Technische Details IRFH7004TRPBF Infineon Technologies
Description: MOSFET N-CH 40V 100A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-VQFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V, Power Dissipation (Max): 156W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 150µA, Supplier Device Package: 8-PQFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 194 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6419 pF @ 25 V.
Weitere Produktangebote IRFH7004TRPBF nach Preis ab 0.77 EUR bis 2.6 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRFH7004TRPBF | Infineon Technologies |
Trans MOSFET N-CH Si 40V 259A 8-Pin PQFN EP T/R |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
IRFH7004TRPBF | Infineon Technologies |
Trans MOSFET N-CH Si 40V 259A 8-Pin PQFN EP T/R |
auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
IRFH7004TRPBF | Infineon Technologies |
MOSFETs 40V 100A 1.4mOhm HEXFET 156W 134nC |
auf Bestellung 4129 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
IRFH7004TRPBF | Infineon Technologies |
Trans MOSFET N-CH Si 40V 259A 8-Pin PQFN EP T/R |
auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
|
IRFH7004TRPBF | Infineon Technologies |
Description: MOSFET N-CH 40V 100A 8PQFNPackaging: Cut Tape (CT) Package / Case: 8-VQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 150µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 194 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6419 pF @ 25 V |
auf Bestellung 3400 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IRFH7004TRPBF |
![]() |
Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 40V 259A 8-Pin PQFN EP T/R
Trans MOSFET N-CH Si 40V 259A 8-Pin PQFN EP T/R
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 4000+ | 0.97 EUR |
| IRFH7004TRPBF |
![]() |
Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 40V 259A 8-Pin PQFN EP T/R
Trans MOSFET N-CH Si 40V 259A 8-Pin PQFN EP T/R
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 126+ | 1.17 EUR |
| 127+ | 1.14 EUR |
| 142+ | 1 EUR |
| 250+ | 0.84 EUR |
| IRFH7004TRPBF |
![]() |
Hersteller: Infineon Technologies
MOSFETs 40V 100A 1.4mOhm HEXFET 156W 134nC
MOSFETs 40V 100A 1.4mOhm HEXFET 156W 134nC
auf Bestellung 4129 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.2 EUR |
| 10+ | 1.05 EUR |
| 25+ | 1.04 EUR |
| 100+ | 0.99 EUR |
| IRFH7004TRPBF |
![]() |
Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 40V 259A 8-Pin PQFN EP T/R
Trans MOSFET N-CH Si 40V 259A 8-Pin PQFN EP T/R
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 64+ | 2.3 EUR |
| 126+ | 1.13 EUR |
| 127+ | 1.07 EUR |
| 142+ | 0.92 EUR |
| 250+ | 0.77 EUR |
| IRFH7004TRPBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 100A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 194 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6419 pF @ 25 V
Description: MOSFET N-CH 40V 100A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 194 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6419 pF @ 25 V
auf Bestellung 3400 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.6 EUR |
| 11+ | 1.71 EUR |
| 100+ | 1.31 EUR |
| 500+ | 1.16 EUR |
| 1000+ | 1.07 EUR |
| 2000+ | 1.03 EUR |



