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IRFH7191TRPBF

IRFH7191TRPBF Infineon / IR


Infineon-IRFH7191-DS-v01_01-EN-1227352.pdf
Hersteller: Infineon / IR
MOSFET HEXFET 100V N CHANNEL
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Technische Details IRFH7191TRPBF Infineon / IR

Description: MOSFET N-CH 100V 15A/80A PQFN, Rds On (Max) @ Id, Vgs: 8mOhm @ 48A, 10V, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1685 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: PQFN (5x6), Vgs(th) (Max) @ Id: 3.6V @ 100µA, Power Dissipation (Max): 3.6W (Ta), 104W (Tc).

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IRFH7191TRPBF International Rectifier IRFH7191PbF.pdf MOSFET N-CH 100V 15A/80A PQFN Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFH7191TRPBF IRFH7191TRPBF Infineon Technologies IRFH7191PbF.pdf Description: MOSFET N-CH 100V 15A/80A PQFN
Rds On (Max) @ Id, Vgs: 8mOhm @ 48A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1685 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PQFN (5x6)
Vgs(th) (Max) @ Id: 3.6V @ 100µA
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFH7191TRPBF IRFH7191TRPBF Infineon Technologies IRFH7191PbF.pdf Description: MOSFET N-CH 100V 15A/80A PQFN
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1685 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PQFN (5x6)
Vgs(th) (Max) @ Id: 3.6V @ 100µA
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 48A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc)
FET Type: N-Channel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFH7191TRPBF IRFH7191PbF.pdf
Hersteller: International Rectifier
MOSFET N-CH 100V 15A/80A PQFN Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFH7191TRPBF IRFH7191PbF.pdf
IRFH7191TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 15A/80A PQFN
Rds On (Max) @ Id, Vgs: 8mOhm @ 48A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1685 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PQFN (5x6)
Vgs(th) (Max) @ Id: 3.6V @ 100µA
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFH7191TRPBF IRFH7191PbF.pdf
IRFH7191TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 15A/80A PQFN
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1685 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PQFN (5x6)
Vgs(th) (Max) @ Id: 3.6V @ 100µA
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 48A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc)
FET Type: N-Channel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH