IRFH7194TRPBF International Rectifier

Description: HEXFET POWER MOSFET, Packaging: Bulk, Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 35A (Tc), Rds On (Max) @ Id, Vgs: 16.4mOhm @ 21A, 10V, Power Dissipation (Max): 3.6W (Ta), 39W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 50µA, Supplier Device Package: 8-PQFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 733 pF @ 50 V.