IRFH7936TR2PBF Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 30V 20A PQFN56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 15 V
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Technische Details IRFH7936TR2PBF Infineon Technologies
Description: MOSFET N-CH 30V 20A PQFN56, Packaging: Cut Tape (CT), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 54A (Tc), Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V, Vgs(th) (Max) @ Id: 2.35V @ 50µA, Supplier Device Package: 8-PQFN (5x6), Part Status: Obsolete, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 15 V.
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Preis ohne MwSt |
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IRFH7936TR2PBF | Hersteller : Infineon / IR |
MOSFET MOSFT 30V 20A 4.8mOhm 17nC |
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