IRFH8307TRPBF Infineon Technologies

Description: MOSFET N-CH 30V 42A/100A 8PQFN, Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: 8-PQFN (5x6), Vgs(th) (Max) @ Id: 2.35V @ 150µA, Power Dissipation (Max): 3.6W (Ta), 156W (Tc), Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).