IRFH8324TR2PBF Infineon Technologies
auf Bestellung 1600 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 842+ | 0.64 EUR |
| 1000+ | 0.57 EUR |
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Technische Details IRFH8324TR2PBF Infineon Technologies
Description: MOSFET N-CH 30V 23A/90A PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 90A (Tc), Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V, Power Dissipation (Max): 3.6W (Ta), 54W (Tc), Vgs(th) (Max) @ Id: 2.35V @ 50µA, Supplier Device Package: PQFN (5x6), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 10 V.
Weitere Produktangebote IRFH8324TR2PBF nach Preis ab 0.88 EUR bis 1.11 EUR
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IRFH8324TR2PBF | Hersteller : Infineon Technologies |
 Description: MOSFET N-CH 30V 23A/90A PQFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 90A (Tc) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V Power Dissipation (Max): 3.6W (Ta), 54W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 50µA Supplier Device Package: PQFN (5x6) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 10 V |
auf Bestellung 72 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFH8324TR2PBF Produktcode: 157383
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IRFH8324TR2PBF | Hersteller : Infineon Technologies |
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IRFH8324TR2PBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 23A/90A PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 90A (Tc) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V Power Dissipation (Max): 3.6W (Ta), 54W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 50µA Supplier Device Package: PQFN (5x6) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 10 V |
Produkt ist nicht verfügbar |
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IRFH8324TR2PBF | Hersteller : Infineon Technologies |
MOSFET MOSFT 30V 50A 4.1mOhm 15nC Qg |
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