Technische Details IRFH8334TRPBF Infineon Technologies
Description: MOSFET N-CH 30V 14A/44A PQFN, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PQFN (5x6), Vgs(th) (Max) @ Id: 2.35V @ 25µA, Power Dissipation (Max): 3.2W (Ta), 30W (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 44A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount.
Weitere Produktangebote IRFH8334TRPBF nach Preis ab 0.29 EUR bis 0.97 EUR
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IRFH8334TRPBF | Infineon Technologies |
 MOSFETs 30V 1 N-CH HEXFET 12.5mOhms 24nC |
auf Bestellung 6615 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFH8334TRPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 14A/44A PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 44A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V Power Dissipation (Max): 3.2W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 10 V |
auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRFH8334TRPBF | Infineon |
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auf Bestellung 88000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IRFH8334TRPBF |
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Hersteller: Infineon Technologies
MOSFETs 30V 1 N-CH HEXFET 12.5mOhms 24nC
MOSFETs 30V 1 N-CH HEXFET 12.5mOhms 24nC
auf Bestellung 6615 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 0.64 EUR |
| 10+ | 0.48 EUR |
| 100+ | 0.38 EUR |
| 500+ | 0.33 EUR |
| 1000+ | 0.29 EUR |
| IRFH8334TRPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 14A/44A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Power Dissipation (Max): 3.2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 10 V
Description: MOSFET N-CH 30V 14A/44A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Power Dissipation (Max): 3.2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 10 V
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 19+ | 0.97 EUR |
| 32+ | 0.55 EUR |
| 100+ | 0.42 EUR |
| IRFH8334TRPBF |
|
Hersteller: Infineon
auf Bestellung 88000 Stücke:
Lieferzeit 21-28 Tag (e)